Installation type | Surface mount |
packing | TR,CT |
series | TrenchMOS™ |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 6-TSSOP,SC-88,SOT-363 |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 200mW |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 125mA |
On resistance (maximum) for different Ids and Vgs | 8 Ω @ 10mA,4V |
Vgs (th) (maximum) for different Ids | 1.5V @ 100µA |
Gate charge (Qg) at different Vgs (maximum) | 0.35nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 18.5pF @ 5V |
FET function | Logic level gate |