PMGD8000LN,115
Home
Category
FET, MOSFET
PMGD8000LN,115
The pictures are for reference only
like

PMGD8000LN,115

Brand:NXP
Model:PMGD8000LN,115
stock:28398
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series TrenchMOS™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 6-TSSOP,SC-88,SOT-363
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 200mW
FET Type 2 N-channels(two)
Drain source voltage (Vdss) 30V
Current at 25 ° C - continuous drain (Id) 125mA
On resistance (maximum) for different Ids and Vgs 8 Ω @ 10mA,4V
Vgs (th) (maximum) for different Ids 1.5V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 0.35nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 18.5pF @ 5V
FET function Logic level gate
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer